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| Issue Number | 001 21 October 2009 New Product ZXMN20B28K ZXMN15A27K Announcement MOSFETs optimised for Voice over Internet Protocol (VoIP) Diodes Incorporated has extended its family of MOSFETs tailored for VoIP communication equipment. The ZXMN20B28K and ZXMN15A27K are avalanche rugged and designed for driving transformers in the DC-DC converter stage of Subscriber Line Interface Circuits (SLIC). These MOSFETs combined with a transformer allow a wide range of battery voltage (VBAT) to be efficiently converted in the SLIC. This eliminates high voltage external power supplies that are bulky and expensive. SLICs are the gateway for VoIP applications in the exchange and can be used for interfacing with a range of different end equipment including Cable (EMTA), DSL modems (IAD) and Analog Terminal Adapters. As well as Private Branch Exchanges including IP-PBX. VoIP enables a lower total cost of ownership whilst providing more services to the end-user. The Diodes' Advantage The ZXMN20B28K and ZXMN15A27K are N-channel MOSFETs designed to meet the stringent circuit requirements in the DC-DC conversion stage of SLICs. High breakdown voltage (VDSS) and Pulse Current (IDM) With 200V and 150V VDSS, then VBAT exceeding 150V can be driven into multiple subscriber lines with lengths beyond 6km. Also, with high IDM handling capabilities, the MOSFETs can drive the transformer to deliver the required RING and TIP currents. Avalanche rugged Both MOSFETs have been designed to withstand the high pulse avalanche energy that will be induced by the transformer during switching transition. Low gate charge (Qg) and input capacitance (Ciss) Low Qg and Ciss means that both MOSFETs can be driven with minimal or no buffering. This simplifies the SLIC design and reduces component count and cost. The ZXMN20B28K is also capable of being driven at low logic level voltages. AEC-Q101, "Green"and RoHS Compliant The ZXMN20B28K and ZXMN15A27K are qualified to AEC-Q101 standard, are RoHS compliant and contain no halogens or antimony compounds. Circuit Function For generating the VBAT required for driving the RING and TIP linefeed output of SLICs, an on-board DC-DC converter using MOSFET-transformer is the most suitable. Increased efficiency The MOSFET and transformer DC-DC conversion has a greater power efficiency than the equivalent solution using a bipolar transistor (BJT) and inductor. Typically the efficiency can be increased from 67% to 80%. Low DC supply voltage (VDC) The MOSFET and transformer is the preferred solution for SLICs with low VDC. www.diodes.com Issue Number | 001 21 October 2009 New Product ZXMN20B28K ZXMN15A27K Announcement MOSFETs optimised for Voice over Internet Protocol (VoIP) Diodes' MOSFETs for transformer based DC-DC converters VDC DC-DC converter TRIP VBAT SLIC Controller Linefeed circuitry VTR RING Twisted pair line to phone N-channel MOSFET RDS(on) max (m) @ VGS 5V ZXMN20B28K ZXMN15A27K ZXMN10A25K ZXMN10A08G ZXMN10A11K ZXMN10A11G ZXMN7A11K ZXMN7A11G ZXMN6A25N8 ZXMN6A08G ZXMN6A08E6 ZXMN6A11G TO252-3L TO252-3L TO252-3L SOT223 TO252-3L SOT223 TO252-3L SOT223 SO-8 SOT223 SOT23-6 SOT223 200 150 100 100 100 100 70 70 60 60 60 60 10.2 9.5 9.9 3.9 8.5 3.9 8.5 3.9 2.8 3.9 1.7 3.9 2.3 2.6 6.4 2.9 3.5 2.4 6.1 3.8 5.7 5.3 3.5 4.4 17.3 17.2 21.0 11.0 9.9 7.9 17.0 10.0 25.7 20.0 16.0 15.6 780 190 190 70 150 150 180 6V 150 300 450 450 10V 750 650 125 250 350 350 130 130 50 80 80 120 Ciss Typ (pF) 358 169 859 405 274 274 298 298 1063 459 459 330 Qg Typ (nC) @5V 8.1 9.6 4.2 3.0 3.0 4.4 4.4 11.0 4.0 4.0 3.0 Qg Typ (nC) @10V 12.9 6.6 17.2 7.7 5.4 5.4 7.4 7.4 20.4 5.8 5.8 5.7 Part Name Pack VDSS (V) PD (W) ID (A) IDM (A) EAS UIS (Note 1) Yes Yes (Note 2) (Note 3) No No No No No No No No No No Notes: 1. Single pulse avalanche energy (EAS) testing using an Unclamped Inductive Switch (UIS) test in production. 2. EAS = 73mJ with UIS conditions of L = 4.83mH, IAS = 5.5A, RG = 25, VDD = 100V, starting TJ = 25C. 3. EAS = 55mJ with UIS conditions of L = 5.95mH, IAS = 4.3A, RG = 25, VDD = 100V, starting TJ = 25C. www.diodes.com |
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